DMNH6042SSDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 10V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Surface Mount :

yes

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

16.7A Tc

Drain Current-Max (Abs) (ID) :

5.3A

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2016

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power - Max :

2.1W

Pulsed Drain Current-Max (IDM) :

35A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

FET Type :

2 N-Channel (Dual)

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.05Ohm

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

65 mJ

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

High Reliability

Factory Lead Time :

18 Weeks

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 25V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V