DMNH10H028SK3Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2W Ta

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Continuous Drain Current (ID) :

55A

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2245pF @ 50V

Additional Feature :

High Reliability

Factory Lead Time :

17 Weeks

Rds On (Max) @ Id, Vgs :

28m Ω @ 20A, 10V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Number of Elements :

1

Drain-source On Resistance-Max :

0.028Ohm

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

43 mJ

Drain to Source Voltage (Vdss) :

100V

Published :

2015

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

58A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED