DMNH10H028SPSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

FET Type :

N-Channel

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

28m Ω @ 20A, 10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2245pF @ 50V

Case Connection :

DRAIN

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

35 mJ

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

DS Breakdown Voltage-Min :

100V

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

40A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

54A

Number of Pins :

8

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drain to Source Voltage (Vdss) :

100V

Published :

2015

Reference Standard :

AEC-Q101

Power Dissipation-Max :

1.6W Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON