DMN10H220LPDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Brand :

Diodes Incorporated

Mounting Type :

Surface Mount, Wettable Flank

Channel Type :

N Channel

Power - Max :

2.2W (Ta)

Qualification :

-

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Channels :

2 Channel

Product Category :

MOSFET

Supplier Device Package :

PowerDI5060-8 (Type R)

Package :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Subcategory :

MOSFETs

Transistor Polarity :

N Channel

Channel Mode :

Enhancement

Manufacturer :

Diodes Incorporated

Configuration :

Dual

Continuous Drain Current Id :

8A

Product Status :

Active

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

384pF @ 25V

Technology :

Si

Series :

-

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Minimum Operating Temperature :

- 55 C

MSL :

MSL 1 - Unlimited

Packaging :

Cut Tape

Rise Time :

8.7 ns

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

FET Feature :

Standard

Transistor Type :

2 N-Channel

Mounting Style :

SMD/SMT

Rds On (Max) @ Id, Vgs :

222mOhm @ 2A, 10V