DMN1004UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0048Ohm

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

Number of Terminations :

6

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.1W Ta

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

6-UDFN Exposed Pad

Terminal Position :

Dual

Transistor Application :

SWITCHING

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2385pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 15A, 4.5V

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Drain Current-Max (Abs) (ID) :

15A

Vgs (Max) :

±8V

Factory Lead Time :

17 Weeks

DS Breakdown Voltage-Min :

12V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

S-PDSO-N6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN