DMN100-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

500mW

Turn-Off Delay Time :

25 ns

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

Number of Pins :

3

Published :

2011

Weight :

7.994566mg

FET Type :

N-Channel

Power Dissipation-Max :

500mW Ta

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Current Rating :

1.1A

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Resistance :

240mOhm

Rds On (Max) @ Id, Vgs :

240m Ω @ 1A, 10V

Continuous Drain Current (ID) :

1.1A

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Element Configuration :

Single

Voltage - Rated DC :

30V

Nominal Vgs :

3 V

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 1mA

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Length :

3.1mm

Rise Time :

15ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Terminal Position :

Dual

Radiation Hardening :

No

Height :

1.3mm

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

19 Weeks

Lead Free :

Lead Free

Width :

1.7mm

Number of Terminations :

3