DMG4800LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.17W

Additional Feature :

High Reliability

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

798pF @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

26.33 ns

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.6V

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Height :

1.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Weight :

73.992255mg

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

8.56nC @ 5V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Max Junction Temperature (Tj) :

150°C

Number of Elements :

2

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Turn On Delay Time :

5.03 ns

Radiation Hardening :

No

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

8.55 ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 9A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Gate to Source Voltage (Vgs) :

25V

Drain-source On Resistance-Max :

0.016Ohm

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Length :

4.95mm

Terminal Form :

Gull wing

Power Dissipation :

1.17W

Drain to Source Voltage (Vdss) :

30V

Rise Time :

4.5ns

Base Part Number :

DMG4800LSD

Width :

3.95mm

Number of Pins :

8

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

7.5A