DMC1229UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Number of Elements :

2

Radiation Hardening :

No

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

12V

DS Breakdown Voltage-Min :

12V

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 8V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

3.8A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2014

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

6

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Max Power Dissipation :

1.4W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-UDFN Exposed Pad

JESD-609 Code :

e4

ECCN Code :

EAR99

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.029Ohm

Factory Lead Time :

15 Weeks

Reference Standard :

AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

5.6A 3.8A

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

914pF @ 6V

Peak Reflow Temperature (Cel) :

260