DMC1030UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 4.5V, 13nC @ 4.5V

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1003pF @ 6V 1028pF @ 6V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Package / Case :

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N and P-Channel Complementary

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta 3.9A Ta

Rds On (Max) @ Id, Vgs :

34m Ω @ 4.6A, 4.5V, 59m Ω @ 3.6A, 4.5V

Factory Lead Time :

15 Weeks

Power - Max :

1.36W Ta

Drain to Source Voltage (Vdss) :

12V

ECCN Code :

EAR99

FET Feature :

Standard

Published :

2014

Series :

Automotive, AEC-Q101

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)