DMC1028UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

DRAIN

ECCN Code :

EAR99

Published :

2015

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 8V

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

6A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

1.36W

Number of Elements :

2

DS Breakdown Voltage-Min :

12V

Drain-source On Resistance-Max :

0.025Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

12V 20V

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

787pF @ 6V

JESD-30 Code :

S-PDSO-N6

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6A 3.4A

Package / Case :

6-UDFN Exposed Pad

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.2A, 4.5V

Factory Lead Time :

15 Weeks