CSD88537ND

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

4.9mm

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 30V

Weight :

540.001716mg

Series :

NexFET™

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

6 ns

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

2

Lead Free :

Lead Free

Rise Time :

15ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.1W

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Number of Terminations :

8

Terminal Form :

Gull wing

Height :

1.75mm

Base Part Number :

CSD88537

Radiation Hardening :

No

Turn-Off Delay Time :

9 ns

Transistor Application :

SWITCHING

Thickness :

1.58mm

ECCN Code :

EAR99

Max Power Dissipation :

2.1W

Drain-source On Resistance-Max :

0.019Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

15A

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e4

Drain Current-Max (Abs) (ID) :

8A

Width :

3.91mm

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Gold

Number of Pins :

8

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

19 ns

Transistor Element Material :

SILICON