CSD87313DMST

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Number of Elements :

2

Feedback Cap-Max (Crss) :

200 pF

FET Type :

2 N-Channel (Dual) Common Drain

Package / Case :

8-PowerWDFN

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Base Part Number :

CSD87313

Drain to Source Resistance :

5.5mOhm

Avalanche Energy Rating (Eas) :

67 mJ

Thickness :

750μm

Case Connection :

SOURCE

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

AVALANCHE RATED

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Length :

3.3mm

Power - Max :

2.7W

Vgs(th) (Max) @ Id :

1.2V @ 250µA

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4290pF @ 15V

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Width :

3.3mm

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR