BUL49DFP

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Mfr.Part #
BUL49DFP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 450V 5A TO220FP
Stock
33,565
In Stock :
33,565

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
hFE Min :
10
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 800mA, 4A
Mounting Type :
Through Hole
Package / Case :
TO-220-3 Full Pack
Collector Emitter Breakdown Voltage :
450V
Power - Max :
34W
JESD-609 Code :
e3
Max Collector Current :
5A
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 7A 10V
Current - Collector Cutoff (Max) :
100μA
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
450V
Mount :
Through Hole
JEDEC-95 Code :
TO-220AB
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
10V
Transistor Element Material :
SILICON
Radiation Hardening :
No
Max Power Dissipation :
80W
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Number of Terminations :
3
Pin Count :
3
Terminal Finish :
Matte Tin (Sn) - annealed
Pbfree Code :
yes
Number of Elements :
1
Base Part Number :
BUL49
Case Connection :
Isolated
Transistor Type :
NPN
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49DFP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BUL49, BUL49DFP pinout, BUL49DFP datasheet PDF, BUL49DFP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49DFP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL49DFP


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

BUL49DFP Overview


DC current gain in this device equals 4 @ 7A 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 800mA, 4A.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.

BUL49DFP Features


the DC current gain for this device is 4 @ 7A 10V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V


BUL49DFP Applications


There are a lot of STMicroelectronics
BUL49DFP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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