BUL45D2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Weight :

4.535924g

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Type :

NPN

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

Voltage - Rated DC :

700V

Base Part Number :

BUL45

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Collector Emitter Breakdown Voltage :

400V

Width :

4.82mm

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Case Connection :

COLLECTOR

Gain Bandwidth Product :

13MHz

Transition Frequency :

13MHz

Collector Base Voltage (VCBO) :

700V

Collector Emitter Voltage (VCEO) :

400V

Height :

9.28mm

Max Collector Current :

5A

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

22

Surface Mount :

No

Length :

10.28mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Max Power Dissipation :

75W

Number of Elements :

1

Frequency :

13MHz

Pin Count :

3

Current Rating :

5A

Collector Emitter Saturation Voltage :

460mV

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100μA

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

75W

Published :

2001

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Packaging :

Tube

Emitter Base Voltage (VEBO) :

12V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Number of Pins :

3