BUL45D2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

5A

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Pbfree Code :

yes

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2001

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

hFE Min :

22

Transition Frequency :

13MHz

Gain Bandwidth Product :

13MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Voltage - Rated DC :

700V

Max Power Dissipation :

75W

Collector Emitter Breakdown Voltage :

400V

Radiation Hardening :

No

Weight :

4.535924g

Transistor Element Material :

SILICON

Transistor Type :

NPN

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

100μA

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Package / Case :

TO-220-3

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

400V

Power Dissipation :

75W

Number of Terminations :

3

Number of Pins :

3

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Frequency :

13MHz

Length :

10.28mm

Height :

9.28mm

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Mounting Type :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Surface Mount :

No

Emitter Base Voltage (VEBO) :

12V

Collector Emitter Saturation Voltage :

460mV

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

700V

Max Collector Current :

5A

Width :

4.82mm

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Base Part Number :

BUL45

Contact Plating :

Tin

REACH SVHC :

No SVHC