BUL49D

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Mfr.Part #
BUL49D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220
Stock
24,980
In Stock :
24,980

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
10.4mm
Width :
4.6mm
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 800mA, 4A
Collector Base Voltage (VCBO) :
850V
Mount :
Through Hole
Pin Count :
3
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
10V
Number of Elements :
1
Max Breakdown Voltage :
450V
Number of Terminations :
3
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Factory Lead Time :
8 Weeks
Base Part Number :
BUL49
Lead Free :
Lead Free
Mounting Type :
Through Hole
Packaging :
Tube
hFE Min :
10
Collector Emitter Voltage (VCEO) :
450V
Max Collector Current :
5A
Power Dissipation :
80W
Current - Collector Cutoff (Max) :
100μA
Voltage - Rated DC :
450V
Height :
9.15mm
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 7A 10V
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
80W
Current Rating :
5A
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
1.2V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
450V
Contact Plating :
Tin
Transistor Type :
NPN
Datasheets
BUL49D
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49D from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:BUL49, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, BUL49D pinout, BUL49D datasheet PDF, BUL49D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL49D


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL49D Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 7A 10V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 800mA, 4A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.There is a breakdown input voltage of 450V volts that it can take.Collector current can be as low as 5A volts at its maximum.

BUL49D Features


the DC current gain for this device is 4 @ 7A 10V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V
the current rating of this device is 5A


BUL49D Applications


There are a lot of STMicroelectronics
BUL49D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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