BUL49D

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Mfr.Part #
BUL49D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220
Stock
24,980
In Stock :
24,980

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
450V
Number of Terminations :
3
Lead Free :
Lead Free
Number of Elements :
1
Collector Base Voltage (VCBO) :
850V
Max Collector Current :
5A
Contact Plating :
Tin
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.4mm
Operating Temperature :
150°C TJ
Factory Lead Time :
8 Weeks
ECCN Code :
EAR99
Width :
4.6mm
Collector Emitter Saturation Voltage :
1.2V
hFE Min :
10
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 800mA, 4A
Voltage - Rated DC :
450V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 7A 10V
Radiation Hardening :
No
Height :
9.15mm
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
10V
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA
Number of Pins :
3
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Max Power Dissipation :
80W
Mount :
Through Hole
JESD-609 Code :
e3
Base Part Number :
BUL49
Max Breakdown Voltage :
450V
Transistor Type :
NPN
Packaging :
Tube
Polarity/Channel Type :
NPN
Power Dissipation :
80W
Pin Count :
3
Current Rating :
5A
Collector Emitter Voltage (VCEO) :
450V
Element Configuration :
Single
Mounting Type :
Through Hole
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49D from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:BUL49, Mounting Type:Through Hole, BUL49D pinout, BUL49D datasheet PDF, BUL49D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL49D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL49D


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL49D Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 7A 10V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 800mA, 4A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.There is a breakdown input voltage of 450V volts that it can take.Collector current can be as low as 5A volts at its maximum.

BUL49D Features


the DC current gain for this device is 4 @ 7A 10V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V
the current rating of this device is 5A


BUL49D Applications


There are a lot of STMicroelectronics
BUL49D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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