BUL45G

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Mfr.Part #
BUL45G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220
Stock
13,085
In Stock :
13,085

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Mounting Type :
Through Hole
Published :
2006
Series :
SWITCHMODE™
Operating Temperature :
-65°C~150°C TJ
Width :
6.35mm
Transition Frequency :
12MHz
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
hFE Min :
14
Base Part Number :
BUL45
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 300mA 5V
Pin Count :
3
Collector Emitter Breakdown Voltage :
400V
Max Collector Current :
5A
Frequency :
12MHz
Emitter Base Voltage (VEBO) :
9V
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Radiation Hardening :
No
Transistor Application :
SWITCHING
Number of Pins :
3
Gain Bandwidth Product :
12MHz
Mount :
Through Hole
ECCN Code :
EAR99
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Current Rating :
5A
Number of Elements :
1
Voltage - Rated DC :
400V
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
Transistor Type :
NPN
RoHS Status :
RoHS Compliant
Current - Collector Cutoff (Max) :
100μA
Element Configuration :
Single
Length :
6.35mm
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
890mV
Polarity/Channel Type :
NPN
Pbfree Code :
yes
Power Dissipation :
75W
Collector Base Voltage (VCBO) :
700V
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
75W
Transistor Element Material :
SILICON
Height :
6.35mm
Package / Case :
TO-220-3
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Collector Emitter Voltage (VCEO) :
400V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 400mA, 2A
Weight :
4.535924g
Datasheets
BUL45G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUL45G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Base Part Number:BUL45, Number of Pins:3, Package / Case:TO-220-3, BUL45G pinout, BUL45G datasheet PDF, BUL45G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUL45G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUL45G


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL45G Overview


This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 890mV.A VCE saturation (Max) of 400mV @ 400mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 12MHz.A maximum collector current of 5A volts is possible.

BUL45G Features


the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz


BUL45G Applications


There are a lot of ON Semiconductor
BUL45G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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