BUL416T
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- Mfr.Part #
- BUL416T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 110W
- Mount :
- Through Hole
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Base Part Number :
- BUL416
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 18
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 6A
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Voltage (VCEO) :
- 800V
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 110W
- Contact Plating :
- Tin
- Datasheets
- BUL416T
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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