BSS84V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

19 Weeks

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

130mA

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Terminal Form :

Flat

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

50V

Gate to Source Voltage (Vgs) :

15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

10Ohm

Operating Temperature :

-55°C~150°C TJ

Length :

1.6mm

Width :

1.2mm

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

18 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Published :

2013

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-50V

Max Power Dissipation :

150mW

Element Configuration :

Dual

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Weight :

3.005049mg

Drain Current-Max (Abs) (ID) :

0.13A

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Pbfree Code :

yes

JESD-609 Code :

e3

Height :

600μm

Lead Free :

Lead Free

Power Dissipation :

150mW

Package / Case :

SOT-563, SOT-666

Contact Plating :

Tin

Number of Pins :

6

Pin Count :

6

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Element Material :

SILICON