BSS816NW L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Qualification Status :

Not Qualified

Feedback Cap-Max (Crss) :

10 pF

Pin Count :

3

Drain-source On Resistance-Max :

0.16Ohm

Series :

OptiMOS™

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Reach Compliance Code :

Compliant

Published :

2011

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±8V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.4A, 2.5V

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 2.5V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

750mV @ 3.7μA

Drain Current-Max (Abs) (ID) :

1.4A

Power Dissipation-Max :

500mW Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount