BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 P -60V -0.17A Transistor
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 6.3 ns
- Input Capacitance :
- 73pF
- Nominal Vgs :
- -1.7 V
- Current :
- 13A
- Rds On Max :
- 10 Ω
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Width :
- 3.05mm
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Threshold Voltage :
- -1.7V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Resistance :
- 10Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Dual Supply Voltage :
- -50V
- Termination :
- SMD/SMT
- Drain to Source Resistance :
- 10Ohm
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Voltage :
- 50V
- Contact Plating :
- Tin
- Rise Time :
- 6.3ns
- Current Rating :
- -130mA
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 10 ns
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 2.5 ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Voltage (Vdss) :
- 50V
- Max Operating Temperature :
- 150°C
- FET Type :
- P-Channel
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Height :
- 930μm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 360mW
- Power Dissipation-Max :
- 360mW Ta
- Continuous Drain Current (ID) :
- 130mA
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- -50V
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Length :
- 2.92mm
- Drain to Source Breakdown Voltage :
- -50V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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