BSS84

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Mfr.Part #
BSS84
Manufacturer
MDD
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET SOT-23 P Channel 50V
Stock
2,269
In Stock :
2,269

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Manufacturer :
MDD
Product Category :
Transistors - FETs, MOSFETs - Single
Current :
13A
Power Dissipation :
360mW
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drain to Source Breakdown Voltage :
-50V
Vgs(th) (Max) @ Id :
2V @ 1mA
Number of Pins :
3
Factory Lead Time :
8 Weeks
Rise Time :
6.3ns
Vgs (Max) :
±20V
Rds On Max :
10 Ω
Published :
2013
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
2.5 ns
Lead Free :
Lead Free
Supplier Device Package :
SOT-23-3
Gate Charge (Qg) (Max) @ Vgs :
1.3nC @ 5V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
73pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
130mA Ta
Drive Voltage (Max Rds On,Min Rds On) :
5V
Voltage :
50V
Termination :
SMD/SMT
Current Rating :
-130mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
130mA
Min Operating Temperature :
-55°C
Height :
930μm
Mounting Type :
Surface Mount
Voltage - Rated DC :
-50V
Input Capacitance :
73pF
Length :
2.92mm
Drain to Source Resistance :
10Ohm
Radiation Hardening :
No
Number of Elements :
1
Dual Supply Voltage :
-50V
Threshold Voltage :
-1.7V
Width :
3.05mm
Mount :
Surface Mount
Nominal Vgs :
-1.7 V
Max Operating Temperature :
150°C
Resistance :
10Ohm
Rds On (Max) @ Id, Vgs :
10Ohm @ 100mA, 5V
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
360mW Ta
Drain to Source Voltage (Vdss) :
50V
Turn-Off Delay Time :
10 ns
REACH SVHC :
No SVHC
Fall Time (Typ) :
6.3 ns
Contact Plating :
Tin
Datasheets
BSS84
Introducing Transistors - FETs, MOSFETs - Single MDD BSS84 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Voltage:50V, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, BSS84 pinout, BSS84 datasheet PDF, BSS84 amp .Beyond Transistors - FETs, MOSFETs - Single MDD BSS84 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

MDD BSS84


P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3

BSS84 Description

This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

 

 

BSS84 Features

-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V 

Voltage-Controlled P-Channel Small-Signal Switch 

High-Density Cell Design for Low RDS(ON) 

High Saturation Current


 

BSS84 Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.



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