BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET SOT-23 P Channel 50V
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- MDD
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- -1.7V
- Continuous Drain Current (ID) :
- 130mA
- Supplier Device Package :
- SOT-23-3
- Power Dissipation :
- 360mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Max Operating Temperature :
- 150°C
- Dual Supply Voltage :
- -50V
- Voltage :
- 50V
- Power Dissipation-Max :
- 360mW Ta
- Min Operating Temperature :
- -55°C
- Length :
- 2.92mm
- Current :
- 13A
- Nominal Vgs :
- -1.7 V
- Drain to Source Resistance :
- 10Ohm
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 10Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Current Rating :
- -130mA
- Termination :
- SMD/SMT
- Height :
- 930μm
- Turn-Off Delay Time :
- 10 ns
- Factory Lead Time :
- 8 Weeks
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Rise Time :
- 6.3ns
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Drain to Source Breakdown Voltage :
- -50V
- Fall Time (Typ) :
- 6.3 ns
- Published :
- 2013
- Width :
- 3.05mm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 50V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On Max :
- 10 Ω
- Turn On Delay Time :
- 2.5 ns
- Voltage - Rated DC :
- -50V
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Number of Pins :
- 3
- Input Capacitance :
- 73pF
- Datasheets
- BSS84

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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