BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET SOT-23 P Channel 50V
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- MDD
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Number of Pins :
- 3
- Current :
- 13A
- Length :
- 2.92mm
- Continuous Drain Current (ID) :
- 130mA
- Voltage - Rated DC :
- -50V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Input Capacitance :
- 73pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 10Ohm
- Drain to Source Voltage (Vdss) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Resistance :
- 10Ohm
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2013
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- -50V
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Termination :
- SMD/SMT
- Power Dissipation :
- 360mW
- Fall Time (Typ) :
- 6.3 ns
- Voltage :
- 50V
- Current Rating :
- -130mA
- Turn-Off Delay Time :
- 10 ns
- Width :
- 3.05mm
- Dual Supply Voltage :
- -50V
- Nominal Vgs :
- -1.7 V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Rds On Max :
- 10 Ω
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- -1.7V
- Height :
- 930μm
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 360mW Ta
- Supplier Device Package :
- SOT-23-3
- Element Configuration :
- Single
- Turn On Delay Time :
- 2.5 ns
- Rise Time :
- 6.3ns
- Number of Elements :
- 1
- Datasheets
- BSS84

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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