BSS84DWQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

-

Brand :

Diodes Incorporated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

6

Technology :

Si

Surface Mount :

yes

Feedback Cap-Max (Crss) :

12 pF

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

RoHS :

Details

Number of Elements :

2

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10Ohm @ 100mA, 5V

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Power - Max :

300mW (Ta)

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

130mA (Ta)

Package :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

50V

Drain-source On Resistance-Max :

10 Ω

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6

Additional Feature :

High Reliability

Polarity/Channel Type :

P-Channel

FET Feature :

Standard

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Reel

Product Category :

MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain Current-Max (Abs) (ID) :

0.13 A

Mounting Type :

Surface Mount

Supplier Device Package :

SOT-363

Series :

Automotive, AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

50 V

Reference Standard :

AEC-Q101

Power Dissipation-Max (Abs) :

0.3 W

FET Type :

2 P-Channel (Dual)