BSS84AKW,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-50V

Power Dissipation :

260mW

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 5V

Fall Time (Typ) :

25 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

150mA

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Max Dual Supply Voltage :

-50V

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 100mA, 10V

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Surface Mount :

yes

Turn On Delay Time :

13 ns

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

50V

Published :

2011

Pin Count :

3

Power Dissipation-Max :

260mW Ta 830mW Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

SC-70, SOT-323

Radiation Hardening :

No

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Element Material :

SILICON

Resistance :

7.5Ohm

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Turn-Off Delay Time :

48 ns