BSS8402DWQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain Current-Max (Abs) (ID) :

0.115A

Number of Terminations :

6

Terminal Position :

Dual

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

13.5 Ω @ 500mA, 10V

JESD-30 Code :

R-PDSO-G6

Continuous Drain Current (ID) :

130mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

5 pF

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

115mA 130mA

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V 50V

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

7.5Ohm

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

DS Breakdown Voltage-Min :

60V