BSS8402DW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Length :

2.2mm

Base Part Number :

BSS8402DW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

REACH SVHC :

No SVHC

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

0.13A

Resistance :

10Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Contact Plating :

Tin

Element Configuration :

Dual

Current Rating :

115mA

Termination :

SMD/SMT

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Voltage (Vdss) :

60V 50V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Weight :

6.010099mg

Continuous Drain Current (ID) :

115mA

Number of Pins :

6

Mount :

Surface Mount

Width :

1.35mm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Dual Supply Voltage :

60V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Nominal Vgs :

2.5 V

Additional Feature :

High Reliability

Pbfree Code :

yes

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

18 ns

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

16 Weeks

Height :

1mm

Threshold Voltage :

2.5V

Published :

2012

Power Dissipation :

200mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

115mA 130mA

Pin Count :

6

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V