BSP61E6327HTSA1

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Mfr.Part #
BSP61E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP DARL 60V 1A SOT223-4
Stock
28,771
In Stock :
28,771

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
200MHz
Power - Max :
1.5W
Current - Collector (Ic) (Max) :
1A
Published :
2011
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Pin Count :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PDSO-G4
Case Connection :
COLLECTOR
Reach Compliance Code :
Compliant
Package / Case :
TO-261-4, TO-261AA
Frequency - Transition :
200MHz
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
60V
Current - Collector Cutoff (Max) :
10μA
Base Part Number :
BSP61
ECCN Code :
EAR99
Pbfree Code :
yes
Reference Standard :
AEC-Q101
Packaging :
Tape and Reel (TR)
Transistor Type :
PNP - Darlington
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
4
Surface Mount :
yes
Terminal Position :
Dual
Number of Elements :
1
Operating Temperature :
150°C TJ
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material :
SILICON
Datasheets
BSP61E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BSP61E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Base Part Number:BSP61, Number of Terminations:4, Operating Temperature:150°C TJ, BSP61E6327HTSA1 pinout, BSP61E6327HTSA1 datasheet PDF, BSP61E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BSP61E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP61E6327HTSA1


PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP61E6327HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 200MHz in the part.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BSP61E6327HTSA1 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz


BSP61E6327HTSA1 Applications


There are a lot of Infineon Technologies
BSP61E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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