BSP613P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Series :

SIPMOS®

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Avalanche Energy Rating (Eas) :

150 mJ

Power Dissipation-Max :

1.8W Ta

Qualification Status :

Not Qualified

Pbfree Code :

yes

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.29.00.95

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

130m Ω @ 2.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

JESD-609 Code :

e3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON

Pin Count :

4

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.13Ohm

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Pulsed Drain Current-Max (IDM) :

11.6A

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

2.9A