BSP60E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Series :

-

Collector Emitter Voltage (VCEO) :

45 V

Max Power Dissipation :

1.5 W

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Collector Emitter Breakdown Voltage :

45 V

Voltage - Collector Emitter Breakdown (Max) :

45 V

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

1 A

Factory Lead Time :

1 Week

Emitter Base Voltage (VEBO) :

5 V

hFE Min :

1000

Transistor Polarity :

PNP

Package :

Bulk

Manufacturer :

Infineon Technologies AG

Power - Max :

1.5 W

RoHS :

Compliant

Collector Base Voltage (VCBO) :

60 V

Current - Collector Cutoff (Max) :

10μA

ECCN Code :

EAR99

Frequency - Transition :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Lead Free :

Lead Free

Number of Pins :

4

Reach Compliance Code :

Unknown

Supplier Device Package :

PG-SOT223-4-21

Continuous Collector Current :

1

Current Rating :

-1 A

Operating Temperature :

150°C (TJ)

Product Status :

Active

Max Operating Temperature :

150 °C

Max Collector Current :

1 A

Transistor Type :

PNP - Darlington

Min Operating Temperature :

-65 °C

Transition Frequency :

200 MHz

Mount :

Surface Mount

Polarity :

PNP

Package / Case :

TO-261-4, TO-261AA

Voltage Rating (DC) :

-45 V

Mounting Type :

Surface Mount