BSP613PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Number of Elements :

1

Number of Channels :

1

Width :

40mm

Fall Time (Typ) :

7 ns

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Max Dual Supply Voltage :

-60V

Mounting Type :

Surface Mount

Rds On Max :

130 mΩ

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.9A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Halogen Free :

Halogen Free

Current Rating :

-2.9A

Packaging :

Cut Tape (CT)

Published :

2003

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

40mm

Drain to Source Resistance :

110mOhm

Element Configuration :

Single

Height :

1.5mm

Number of Pins :

4

Lead Free :

Contains Lead

Voltage - Rated DC :

-60V

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

130mOhm @ 2.9A, 10V

Power Dissipation-Max :

1.8W Ta

Power Dissipation :

1.8W

Input Capacitance :

875pF

Rise Time :

9ns

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Supplier Device Package :

PG-SOT223-4

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Turn On Delay Time :

6.7 ns

Drain to Source Breakdown Voltage :

-60V

Turn-Off Delay Time :

26 ns

Series :

SIPMOS®