BSP60E6327HTSA1
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- Mfr.Part #
- BSP60E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 45V 1A SOT223-4
- Stock
- 41,001
- In Stock ：
- 41,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP - Darlington
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 1.5W
- Base Part Number :
- BSP60
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 1.8V
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Package / Case :
- TO-261-4, TO-261AA
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Polarity :
- PNP
- Pin Count :
- 4
- Mount :
- Surface Mount
- Frequency - Transition :
- 200MHz
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 200MHz
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- hFE Min :
- 2000
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Datasheets
- BSP60E6327HTSA1
PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP60E6327HTSA1 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BSP60E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP60E6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP60E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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