BSO150N03
- Mfr.Part #
- BSO150N03
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.6A 8DSO
- Stock
- 22,063
- In Stock :
- 22,063
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- RoHS Compliant
- Feedback Cap-Max (Crss) :
- 100 pF
- Current Rating :
- 9.1A
- Max Power Dissipation :
- 1.4W
- Drain-source On Resistance-Max :
- 0.015Ohm
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Number of Pins :
- 8
- Power Dissipation :
- 1.4W
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- FET Type :
- 2 N-Channel (Dual)
- Turn-Off Delay Time :
- 21 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- MS-012AA
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 7.6A
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- FET Feature :
- Standard
- Number of Elements :
- 2
- Published :
- 2008
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 30V
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Base Part Number :
- BSO150N03
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Series :
- OptiMOS™
- Rise Time :
- 4ns
- Vgs(th) (Max) @ Id :
- 2V @ 25μA
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 4 ns
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 9.1A, 10V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 15V
- Datasheets
- BSO150N03

BSO150N03 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
BSO150N03 Description
Innovative manufacturing techniques enable International Rectifier's Fifth Generation HEXFETs to have exceptionally low on-resistance per silicon area. This characteristic gives the designe an extremely efficient and dependable device for use in a variety of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is the ideal option for a multitude of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. Due to the employment of a specially designed leadframe, this change was made possible. With this invention, multiple devices can be used while substantially less board area is needed. The package is made to work with vapor phase infrared or wave soldering techniques.
BSO150N03 Features
? Technology that has been optimized for laptop DC/DC converters
? J EDEC1) qualified for the intended uses
? N-channelz
? Logic degree
? Fantastic gate charge x R DS(on)product (FOM)
? Extremely low RDS resistance (on)
BSO150N03 Applications
Switching applications
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