BSO150N03
- Mfr.Part #
- BSO150N03
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.6A 8DSO
- Stock
- 22,063
- In Stock :
- 22,063
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current Rating :
- 9.1A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 15V
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2V @ 25μA
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 9.1A, 10V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Feature :
- Standard
- Rise Time :
- 4ns
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 Code :
- MS-012AA
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 30V
- Continuous Drain Current (ID) :
- 7.6A
- FET Type :
- 2 N-Channel (Dual)
- Feedback Cap-Max (Crss) :
- 100 pF
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Series :
- OptiMOS™
- Max Power Dissipation :
- 1.4W
- Pin Count :
- 8
- Terminal Finish :
- MATTE TIN
- Power Dissipation :
- 1.4W
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 21 ns
- Fall Time (Typ) :
- 4 ns
- Drain-source On Resistance-Max :
- 0.015Ohm
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Base Part Number :
- BSO150N03
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Datasheets
- BSO150N03

BSO150N03 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
BSO150N03 Description
Innovative manufacturing techniques enable International Rectifier's Fifth Generation HEXFETs to have exceptionally low on-resistance per silicon area. This characteristic gives the designe an extremely efficient and dependable device for use in a variety of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is the ideal option for a multitude of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. Due to the employment of a specially designed leadframe, this change was made possible. With this invention, multiple devices can be used while substantially less board area is needed. The package is made to work with vapor phase infrared or wave soldering techniques.
BSO150N03 Features
? Technology that has been optimized for laptop DC/DC converters
? J EDEC1) qualified for the intended uses
? N-channelz
? Logic degree
? Fantastic gate charge x R DS(on)product (FOM)
? Extremely low RDS resistance (on)
BSO150N03 Applications
Switching applications
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