BSO150N03
- Mfr.Part #
- BSO150N03
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.6A 8DSO
- Stock
- 22,063
- In Stock :
- 22,063
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain-source On Resistance-Max :
- 0.015Ohm
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 2V @ 25μA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 15V
- Feedback Cap-Max (Crss) :
- 100 pF
- FET Feature :
- Standard
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- MS-012AA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current Rating :
- 9.1A
- Fall Time (Typ) :
- 4 ns
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 2
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 7.6A
- Voltage - Rated DC :
- 30V
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.4W
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.4W
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 9.1A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Rise Time :
- 4ns
- Turn-Off Delay Time :
- 21 ns
- Mounting Type :
- Surface Mount
- FET Type :
- 2 N-Channel (Dual)
- Qualification Status :
- Not Qualified
- Base Part Number :
- BSO150N03
- Series :
- OptiMOS™
- Datasheets
- BSO150N03

BSO150N03 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
BSO150N03 Description
Innovative manufacturing techniques enable International Rectifier's Fifth Generation HEXFETs to have exceptionally low on-resistance per silicon area. This characteristic gives the designe an extremely efficient and dependable device for use in a variety of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is the ideal option for a multitude of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. Due to the employment of a specially designed leadframe, this change was made possible. With this invention, multiple devices can be used while substantially less board area is needed. The package is made to work with vapor phase infrared or wave soldering techniques.
BSO150N03 Features
? Technology that has been optimized for laptop DC/DC converters
? J EDEC1) qualified for the intended uses
? N-channelz
? Logic degree
? Fantastic gate charge x R DS(on)product (FOM)
? Extremely low RDS resistance (on)
BSO150N03 Applications
Switching applications
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