BSO130P03SNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

DS Breakdown Voltage-Min :

30V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Power Dissipation-Max :

1.56W Ta

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.013Ohm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3520pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Pin Count :

8

Published :

2006

Rds On (Max) @ Id, Vgs :

13m Ω @ 11.3A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Continuous Drain Current (ID) :

9.2A

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.2V @ 140μA

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED