BSO110N03MSGXUMA1
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- Mfr.Part #
- BSO110N03MSGXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8DSO
- Stock
- 56,464
- In Stock ：
- 56,464
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Dual Supply Voltage :
- 30V
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 7.8 ns
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 4.4 ns
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Published :
- 2010
- Series :
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 15V
- Factory Lead Time :
- 18 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.56W
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Turn-Off Delay Time :
- 9.5 ns
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 10A
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 12.1A, 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Power Dissipation-Max :
- 1.56W Ta
- Rise Time :
- 4.4ns
- Mount :
- Surface Mount
- Datasheets
- BSO110N03MSGXUMA1
N-Channel Tape & Reel (TR) 11m Ω @ 12.1A, 10V ±20V 1500pF @ 15V 20nC @ 10V 8-SOIC (0.154, 3.90mm Width)
BSO110N03MSGXUMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1500pF @ 15V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 9.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSO110N03MSGXUMA1 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 10A
the turn-off delay time is 9.5 ns
BSO110N03MSGXUMA1 Applications
There are a lot of Infineon Technologies
BSO110N03MSGXUMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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