BSO130P03SHXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.56W Ta

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

9.2A

Vgs(th) (Max) @ Id :

2.2V @ 140μA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3520pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Series :

OptiMOS™

Number of Pins :

8

Pin Count :

8

Published :

2001

Vgs (Max) :

±25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Power Dissipation :

1.56W

Max Dual Supply Voltage :

-30V

Rds On (Max) @ Id, Vgs :

13m Ω @ 11.7A, 10V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Contact Plating :

Tin

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Rise Time :

16ns

Number of Elements :

1