BSO119N03S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

Power Dissipation-Max :

1.56W Ta

Mount :

Surface Mount

Pin Count :

8

Termination :

SMD/SMT

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

3.8 ns

Nominal Vgs :

1.6 V

Vgs(th) (Max) @ Id :

2V @ 25μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Number of Elements :

1

Qualification Status :

Not Qualified

Number of Pins :

8

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 15V

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Rise Time :

3.8ns

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MS-012AA

Published :

2006

Continuous Drain Current (ID) :

9A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

18 ns

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

9A

Threshold Voltage :

1.6V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Feedback Cap-Max (Crss) :

93 pF

Gate to Source Voltage (Vgs) :

20V

Resistance :

16.3mOhm

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Transistor Element Material :

SILICON

Current Rating :

9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

FET Type :

N-Channel

Power Dissipation :

1.56W