BSO119N03S
- Mfr.Part #
- BSO119N03S
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A 8DSO
- Stock
- 41,807
- In Stock :
- 41,807
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 11.9m Ω @ 11A, 10V
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 3.8ns
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 9A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- MATTE TIN
- Nominal Vgs :
- 1.6 V
- FET Type :
- N-Channel
- Threshold Voltage :
- 1.6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 3.8 ns
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 2V @ 25μA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1730pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.56W Ta
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.56W
- Dual Supply Voltage :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 30V
- Published :
- 2006
- Resistance :
- 16.3mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- MS-012AA
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Series :
- OptiMOS™
- Termination :
- SMD/SMT
- Current Rating :
- 9A
- Turn-Off Delay Time :
- 18 ns
- Feedback Cap-Max (Crss) :
- 93 pF
- Datasheets
- BSO119N03S

N-Channel Tape & Reel (TR) 11.9m Ω @ 11A, 10V ±20V 1730pF @ 15V 13nC @ 5V 8-SOIC (0.154, 3.90mm Width)
BSO119N03S Description
BSO119N03S is a 30V OptiMOS?2 Power-Transistor manufactured by Infineon. The OptiMOS?2 power MOSFET technology reduces the resistive and switching loss components significantly. The gate charge – and consequently the “figure-of-merit” of our devices – has become the new industry benchmark. More importantly, the output charge is reduced to extremely low levels, minimizing the total switching losses for a given output current.
BSO119N03S Features
-
Fast switching MOSFET for SMPS
-
Optimized technology for notebook DC/DC
-
N-channel
-
Logic level
-
Excellent gate charge x RDS(on) product (FOM)
-
Very low on-resistance RDS(on)
-
Avalanche rated
-
dv/dt rated
BSO119N03S Applications
-
Desktop and notebook computers
-
Consumer equipment
-
PDAs
-
MP3 players
-
Portable electronics
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