BSM600D12P3G001

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2450(W)

Channel Type :

N

Minimum Isolation Voltage :

2500 Vrms

Operating Temperature Classification :

Automotive

Operating Supply Voltage :

-

Product Status :

Active

Minimum Operating Temperature :

- 40 C

Power - Max :

2450W (Tc)

Channel Mode :

Enhancement

Product Type :

Discrete Semiconductor Modules

Reach Compliance Code :

Compliant

Drain-Source On-Volt :

1200(V)

Mounting Style :

Screw Mounts

Package :

Bulk

Brand :

Rohm Semiconductor

Vgs(th) (Max) @ Id :

5.6V @ 182mA

Mounting Type :

Chassis Mount

Supplier Device Package :

Module

Product Category :

Discrete Semiconductor Modules

Mounting :

Screw Mount

Package / Case :

Module

RoHS :

Details

Continuous Drain Current Id :

600A

Product :

Power MOSFET Modules

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

Series :

-

Transistor Polarity :

N-Channel

Technology :

SiC

Rad Hardened :

No

Number of Elements :

2

Pin Count :

11

Gate-Source Voltage (Max) :

22(V)

Maximum Collector Cut-off Current :

4 mA

Operating Temperature :

-40 to 150 °C

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

19 Weeks

Base Product Number :

BSM600

FET Feature :

Silicon Carbide (SiC)

Gate Charge (Qg) (Max) @ Vgs :

-

Rise Time :

55 ns

Continuous Drain Current :

600(A)

Subcategory :

Discrete Semiconductor Modules

Operating Temp Range :

-40C to 175C

Polarity :

N

Current - Continuous Drain (Id) @ 25°C :

600A (Tc)

Type :

Power MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

31000pF @ 10V

Manufacturer :

Rohm Semiconductor

FET Type :

2 N-Channel (Half Bridge)