BSM180D12P2C101

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

25 Weeks

FET Type :

2 N-Channel (Half Bridge)

JESD-30 Code :

R-XUFM-X8

Threshold Voltage :

2.7V

Nominal Vgs :

2.7 V

FET Feature :

Silicon Carbide (SiC)

Length :

122mm

Width :

45.6mm

Gate to Source Voltage (Vgs) :

22V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 35.2mA

Continuous Drain Current (ID) :

180A

Number of Pins :

10

Number of Terminations :

8

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 10V

Power - Max :

1130W

Pulsed Drain Current-Max (IDM) :

360A

Terminal Form :

UNSPECIFIED

Number of Elements :

2

Height :

21.1mm

Terminal Position :

UPPER

Package / Case :

Module

Reach Compliance Code :

not_compliant

Max Power Dissipation :

1.13kW

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Current - Continuous Drain (Id) @ 25°C :

204A Tc

Mount :

Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE