BSL316CH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate, 4.5V Drive

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel Complementary

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

1.4A

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

1.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Transistor Element Material :

SILICON

Mount :

Surface Mount

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

7 pF

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.4A, 10V

Halogen Free :

Halogen Free

Threshold Voltage :

1.6V

ECCN Code :

EAR99

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

1.4A 1.5A

Number of Pins :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 3.7µA

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Series :

Automotive, AEC-Q101, OptiMOS™

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

282pF @ 15V

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

500mW

Max Dual Supply Voltage :

-30V