BLT81,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

2W

Terminal Position :

Dual

Collector-Base Capacitance-Max :

4pF

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

HTS Code :

8541.29.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Base Part Number :

BLT81

Polarity/Channel Type :

NPN

Factory Lead Time :

16 Weeks

Number of Elements :

1

Case Connection :

COLLECTOR

Frequency - Transition :

900MHz

Additional Feature :

High Reliability

JESD-609 Code :

e3

Transistor Type :

NPN

Transistor Element Material :

SILICON

Number of Terminations :

4

ECCN Code :

EAR99

Published :

1998

Qualification Status :

Not Qualified

Gain :

8dB

JESD-30 Code :

R-PDSO-G4

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 300mA 5V

Configuration :

Single

Current - Collector (Ic) (Max) :

500mA

Power - Max :

2W

Packaging :

Tape and Reel (TR)

Operating Temperature :

175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

9.5V

Power Dissipation Ambient-Max :

2W

Pin Count :

4

Mounting Type :

Surface Mount

Terminal Form :

Gull wing