BLT80,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Transistor Type :

NPN

Surface Mount :

yes

Frequency - Transition :

900MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

2W

Collector-Base Capacitance-Max :

3.5pF

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Current - Collector (Ic) (Max) :

250mA

Operating Temperature :

175°C TJ

Terminal Position :

Dual

Number of Terminations :

4

Published :

1998

Base Part Number :

BLT80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 150mA 5V

Pin Count :

4

HTS Code :

8541.29.00.75

Voltage - Collector Emitter Breakdown (Max) :

10V

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Power Dissipation Ambient-Max :

2W

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

2W

Configuration :

Single