BLT80,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

900MHz

Power Dissipation Ambient-Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Configuration :

Single

Operating Temperature :

175°C TJ

Number of Elements :

1

Surface Mount :

yes

Pin Count :

4

Base Part Number :

BLT80

Terminal Form :

Gull wing

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

Transistor Type :

NPN

JESD-30 Code :

R-PDSO-G4

Number of Terminations :

4

Qualification Status :

Not Qualified

Case Connection :

COLLECTOR

Collector-Base Capacitance-Max :

3.5pF

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1998

Power Dissipation-Max (Abs) :

2W

RoHS Status :

ROHS3 Compliant

Power - Max :

2W

Current - Collector (Ic) (Max) :

250mA

Package / Case :

TO-261-4, TO-261AA

Voltage - Collector Emitter Breakdown (Max) :

10V

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 150mA 5V