BLT80,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BLT80

Frequency - Transition :

900MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

Number of Elements :

1

Power Dissipation Ambient-Max :

2W

Qualification Status :

Not Qualified

Package / Case :

TO-261-4, TO-261AA

Surface Mount :

yes

Additional Feature :

High Reliability

Number of Terminations :

4

Published :

1998

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 150mA 5V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

3.5pF

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Operating Temperature :

175°C TJ

Power Dissipation-Max (Abs) :

2W

JESD-30 Code :

R-PDSO-G4

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Pin Count :

4

Configuration :

Single

Current - Collector (Ic) (Max) :

250mA

HTS Code :

8541.29.00.75

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

10V

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Type :

NPN