BLT70,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

900MHz

Current - Collector (Ic) (Max) :

250mA

Surface Mount :

yes

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Power Dissipation Ambient-Max :

2.1W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Published :

1996

Operating Temperature :

175°C TJ

Power - Max :

2.1W

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PDSO-G4

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power Dissipation-Max (Abs) :

2.1W

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Power Gain-Min (Gp) :

6dB

ECCN Code :

EAR99

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Number of Terminations :

4

Voltage - Collector Emitter Breakdown (Max) :

8V

Qualification Status :

Not Qualified

Collector-Base Capacitance-Max :

3.5pF

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA 4.8V

Pin Count :

4