BFU550XAR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 8V

Published :

2011

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

0.75db @ 900MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

L B

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Pin Count :

4

Additional Feature :

LOW NOISE

Transistor Application :

AMPLIFIER

Transition Frequency :

11000MHz

Reference Standard :

AEC-Q101; IEC-60134

Terminal Position :

Dual

Factory Lead Time :

13 Weeks

Power - Max :

450mW

Surface Mount :

yes

Gain :

21.5dB

Mounting Type :

Surface Mount, Gull Wing

Base Part Number :

BFU550

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

11GHz

Series :

Automotive, AEC-Q101

Configuration :

Single

Number of Elements :

1

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

50mA

Polarity/Channel Type :

NPN

Operating Temperature :

-40°C~150°C TJ

Package / Case :

TO-253-4, TO-253AA