BFU530WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

11GHz

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Highest Frequency Band :

L B

Terminal Position :

Dual

Surface Mount :

yes

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Number of Terminations :

3

Transition Frequency :

11000MHz

JESD-30 Code :

R-PDSO-G3

Reference Standard :

AEC-Q101; IEC-60134

Voltage - Collector Emitter Breakdown (Max) :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-70, SOT-323

Packaging :

Tape and Reel (TR)

Base Part Number :

BFU530

Transistor Type :

NPN

Gain :

12.5dB

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Operating Temperature :

-40°C~150°C TJ

Configuration :

Single

Number of Elements :

1

Factory Lead Time :

13 Weeks

Current - Collector (Ic) (Max) :

40mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

450mW

Pin Count :

3

Published :

2011

Transistor Element Material :

SILICON