BFU530WF

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Transition Frequency :

11000MHz

Reference Standard :

AEC-Q101; IEC-60134

Surface Mount :

yes

Power - Max :

450mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

40mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 8V

Additional Feature :

LOW NOISE

Frequency - Transition :

11GHz

Voltage - Collector Emitter Breakdown (Max) :

12V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

NPN

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

3

Polarity/Channel Type :

NPN

Published :

2011

Transistor Element Material :

SILICON

Number of Elements :

1

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Base Part Number :

BFU530

Factory Lead Time :

13 Weeks

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

L B

Package / Case :

SC-70, SOT-323

Configuration :

Single

Gain :

12.5dB