BFU530AR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.6dB @ 900MHz

Frequency - Transition :

11GHz

Highest Frequency Band :

L B

Factory Lead Time :

13 Weeks

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

Dual

Base Part Number :

BFU530

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Series :

Automotive, AEC-Q101

Transistor Type :

NPN

Terminal Form :

Gull wing

Gain :

18dB

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101; IEC-60134

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

12V

Additional Feature :

LOW NOISE

Transition Frequency :

11000MHz

Configuration :

Single

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power - Max :

450mW

Current - Collector (Ic) (Max) :

40mA

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 8V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-236AB

Published :

2011

Package / Case :

TO-236-3, SC-59, SOT-23-3