BFU530AR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

-40°C~150°C TJ

Reference Standard :

AEC-Q101; IEC-60134

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 8V

Surface Mount :

yes

Factory Lead Time :

13 Weeks

JEDEC-95 Code :

TO-236AB

Number of Terminations :

3

Pin Count :

3

Transition Frequency :

11000MHz

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Gain :

18dB

Highest Frequency Band :

L B

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Noise Figure (dB Typ @ f) :

0.6dB @ 900MHz

Series :

Automotive, AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency - Transition :

11GHz

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

40mA

Base Part Number :

BFU530

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Additional Feature :

LOW NOISE

Configuration :

Single

Published :

2011

Number of Elements :

1

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Power - Max :

450mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Collector Emitter Breakdown (Max) :

12V