BFT93,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

175°C TJ

Published :

1997

Surface Mount :

yes

Additional Feature :

LOW NOISE

Number of Elements :

1

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 30mA 5V

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

35mA

Frequency - Transition :

5GHz

Power Dissipation Ambient-Max :

0.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transition Frequency :

5000MHz

Peak Reflow Temperature (Cel) :

260

Reference Standard :

CECC

Configuration :

Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

12V

Power Dissipation-Max (Abs) :

0.3W

Transistor Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

BFT93

JESD-30 Code :

R-PDSO-G3

Noise Figure (dB Typ @ f) :

2.4dB @ 500MHz

Factory Lead Time :

8 Weeks

Power - Max :

300mW

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Finish :

Tin (Sn)

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER