BFT92,215
- Mfr.Part #
- BFT92,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF TRANS PNP 15V 5GHZ TO236AB
- Stock
- 5,965
- In Stock :
- 5,965
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 14mA 10V
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Noise Figure (dB Typ @ f) :
- 2.5dB @ 500MHz
- Published :
- 1997
- Reference Standard :
- CECC
- Power Dissipation Ambient-Max :
- 0.3W
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 5000MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Operating Temperature :
- 175°C TJ
- Configuration :
- Single
- Frequency - Transition :
- 5GHz
- JESD-30 Code :
- R-PDSO-G3
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOW NOISE
- Terminal Position :
- Dual
- Base Part Number :
- BFT92
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 25mA
- Power Dissipation-Max (Abs) :
- 0.3W
- Power - Max :
- 300mW
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-236AB
- HTS Code :
- 8541.21.00.75
- Datasheets
- BFT92,215

BFT92,215 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at
BFT92,215 description
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A.
BFT92,215 Features
High power gain
Low intermodulation distortion
BFT92,215 Applications
Oscilloscopes and spectrum analyzers
Radar systems
RF wideband amplifiers
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