BFT25A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Frequency - Transition :

5GHz

Reference Standard :

CECC

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Power Dissipation-Max (Abs) :

0.032W

Transistor Type :

NPN

HTS Code :

8541.21.00.75

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Gull wing

Terminal Position :

Dual

Transition Frequency :

5000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500μA 1V

Terminal Finish :

Tin (Sn)

Additional Feature :

High Reliability

Transistor Application :

AMPLIFIER

Base Part Number :

BFT25

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Operating Temperature :

175°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Noise Figure (dB Typ @ f) :

1.8dB ~ 2dB @ 1GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Power - Max :

32mW

Collector-Base Capacitance-Max :

0.45pF

Factory Lead Time :

8 Weeks

Power Dissipation Ambient-Max :

0.032W

ECCN Code :

EAR99

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Highest Frequency Band :

L B

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

5V

Surface Mount :

yes

Current - Collector (Ic) (Max) :

6.5mA