BFT25,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

Operating Temperature :

175°C TJ

Collector-Base Capacitance-Max :

0.6pF

Power Dissipation-Max (Abs) :

0.3W

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Reference Standard :

CECC

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Power - Max :

30mW

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

2.3GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1mA 1V

Transition Frequency :

2300MHz

Pin Count :

3

Configuration :

Single

Transistor Element Material :

SILICON

Number of Elements :

1

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Published :

1997

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Surface Mount :

yes

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

5V

Factory Lead Time :

8 Weeks

Power Dissipation Ambient-Max :

0.03W

Noise Figure (dB Typ @ f) :

5.5dB @ 500MHz

Base Part Number :

BFT25

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

6.5mA