BFR520,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Transition Frequency :

9000MHz

Power Dissipation-Max (Abs) :

0.3W

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

15V

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

HTS Code :

8541.21.00.75

Number of Elements :

1

Power - Max :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

Frequency - Transition :

9GHz

Terminal Position :

Dual

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation Ambient-Max :

0.3W

Operating Temperature :

175°C TJ

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Published :

1997

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current - Collector (Ic) (Max) :

70mA

Base Part Number :

BFR520

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Highest Frequency Band :

L B

JESD-609 Code :

e3

Surface Mount :

yes

Number of Terminations :

3

Reference Standard :

CECC