BFR505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

15V

Power - Max :

150mW

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Base Part Number :

BFR505

Terminal Finish :

Tin (Sn)

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Reference Standard :

CECC

Qualification Status :

Not Qualified

Frequency - Transition :

9GHz

Pin Count :

3

Published :

1998

Power Dissipation Ambient-Max :

0.15W

Transition Frequency :

9000MHz

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Highest Frequency Band :

L B

Number of Elements :

1

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Operating Temperature :

175°C TJ

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

18mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max (Abs) :

0.15W

JEDEC-95 Code :

TO-236AB

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

JESD-30 Code :

R-PDSO-G3

Configuration :

Single