BFR505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

Transition Frequency :

9000MHz

Current - Collector (Ic) (Max) :

18mA

Reference Standard :

CECC

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Terminal Form :

Gull wing

Published :

1998

Voltage - Collector Emitter Breakdown (Max) :

15V

Highest Frequency Band :

L B

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Power Dissipation Ambient-Max :

0.15W

Time@Peak Reflow Temperature-Max (s) :

40

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

Power - Max :

150mW

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

0.15W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

3

Frequency - Transition :

9GHz

HTS Code :

8541.21.00.75

JEDEC-95 Code :

TO-236AB

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

175°C TJ

Polarity/Channel Type :

NPN

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Base Part Number :

BFR505

JESD-30 Code :

R-PDSO-G3

Configuration :

Single