BFR505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Packaging :

Tape and Reel (TR)

Transition Frequency :

9000MHz

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Operating Temperature :

175°C TJ

Reference Standard :

CECC

Voltage - Collector Emitter Breakdown (Max) :

15V

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Type :

NPN

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.21.00.75

Power Dissipation-Max (Abs) :

0.15W

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Published :

1998

Number of Elements :

1

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Highest Frequency Band :

L B

JEDEC-95 Code :

TO-236AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

18mA

JESD-30 Code :

R-PDSO-G3

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

Mounting Type :

Surface Mount

Power - Max :

150mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Power Dissipation Ambient-Max :

0.15W

Base Part Number :

BFR505

Surface Mount :

yes

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

9GHz